Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

Live X-Ray Topography and Crystal Growth of Silicon

Defect Engineering During Czochralski Crystal Growth and Silicon Wafer Manufacturing

Single crystal silicon has played the fundamental role in electronic industry since the second half of the 20th century and still remains the most widely used material. Electronic devices and integrated circuits are fabricated on single-crystal silicon wafers which are produced from silicon crystals grown primarily by the Czochralski (CZ) technique. Various defects are formed in the growing cry...

(111,111/002) Enhanced Borrmann Effect in Heat Treated Czochralski Grown Silicon Crystals

für Naturforschung in cooperation with the Max Planck Society for the Advancement of Science under a Creative Commons Attribution 4.0 International License. Dieses Werk wurde im Jahr 2013 vom Verlag Zeitschrift für Naturforschung in Zusammenarbeit mit der Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. digitalisiert und unter folgender Lizenz veröffentlicht: Creative Commons Namen...

Characterization of Cu and Ni precipitates in n- and p-type Czochralski-grown silicon by photoluminescence

Photoluminescence (PL) images and micro-PL maps were taken on nand p-type, Cuand Ni-doped monocrystalline silicon wafers, in which the Ni and Cu had precipitated during ingot growth. Markedly different distributions of the precipitates were observed in the nand p-type samples: in the n-type Cu-doped samples, a particle-lean ring structure was observed, dividing the sample into a central region ...

Nitrogen transport in float-zone and Czochralski silicon investigated by dislocation locking experiments

Dislocation locking experiments have been used to investigate nitrogen-doped float-zone silicon (NFZ-Si). Experiments on NFZ-Si with a nitrogen concentration of 2.2 × 10 cm were carried out at different annealing temperatures (550–830 °C) for different annealing times (0–1500 hours) and experiments on NFZ-Si with a nitrogen concentration of 3 × 10 cm were carried out at 600 °C for 0–1200 hours....